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| BUZ 50 B SIPMOS (R) Power Transistor * N channel * Enhancement mode Pin 1 G Pin 2 D Pin 3 S Type BUZ 50 B VDS 1000 V ID 2A RDS(on) 8 Package TO-220 AB Ordering Code C67078-A1307-A4 Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values 1000 1000 Unit V VDS VDGR ID RGS = 20 k Continuous drain current A 2 TC = 25 C Pulsed drain current IDpuls 8 TC = 25 C Gate source voltage Power dissipation VGS Ptot 20 78 V W TC = 25 C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA -55 ... ...+ 150 C -55 ... ...+ 150 1.6 75 C 55 / 150 / 56 K/W Semiconductor Group 1 07/96 BUZ 50 B Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 1000 3 20 100 10 6.5 4 V VGS = 0 V, ID = 0.25 mA, Tj = 25 C Gate threshold voltage VGS(th) 2.1 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 250 1000 A VDS = 1000 V, VGS = 0 V, Tj = 25 C VDS = 1000 V, VGS = 0 V, Tj = 125 C Gate-source leakage current IGSS 100 nA 8 VGS = 20 V, VDS = 0 V Drain-Source on-resistance RDS(on) VGS = 10 V, ID = 1.5 A Semiconductor Group 2 07/96 BUZ 50 B Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit gfs 0.7 1.5 1600 70 30 - S pF 2100 120 55 ns 30 45 VDS 2 * ID * RDS(on)max, ID = 1.5 A Input capacitance Ciss Coss - VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance Crss - VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time td(on) VDD = 30 V, VGS = 10 V, ID = 2 A RGS = 50 Rise time tr 40 60 VDD = 30 V, VGS = 10 V, ID = 2 A RGS = 50 Turn-off delay time td(off) 110 140 VDD = 30 V, VGS = 10 V, ID = 2 A RGS = 50 Fall time tf 60 80 VDD = 30 V, VGS = 10 V, ID = 2 A RGS = 50 Semiconductor Group 3 07/96 BUZ 50 B Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current IS TC = 25 C Inverse diode direct current,pulsed A 1.05 2 15 2 8 V 1.3 s C Values typ. max. Unit ISM VSD trr Qrr TC = 25 C Inverse diode forward voltage VGS = 0 V, IF = 6 A Reverse recovery time VR = 100 V, IF=lS, diF/dt = 100 A/s Reverse recovery charge VR = 100 V, IF=lS, diF/dt = 100 A/s Semiconductor Group 4 07/96 BUZ 50 B Power dissipation Ptot = (TC) Drain current ID = (TC) parameter: VGS 10 V 2.2 A 80 W Ptot ID 60 1.8 1.6 1.4 1.2 50 40 1.0 30 0.8 0.6 20 0.4 10 0 0 0.2 0.0 20 40 60 80 100 120 C 160 0 20 40 60 80 100 120 C 160 TC TC Safe operating area ID = (VDS) parameter: D = 0.01, TC = 25C 10 2 Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 1 A K/W ID 10 1 t = 880.0ns p 1 s 10 s ZthJC 10 0 10 0 I D DS / 100 s 10 -1 D = 0.50 0.20 0.10 V = R 10 -1 DS (o n) 1 ms 10 ms 10 -2 DC single pulse 0.05 0.02 0.01 10 -2 0 10 10 1 10 2 V 10 3 10 -3 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 VDS tp Semiconductor Group 5 07/96 BUZ 50 B Typ. output characteristics ID = (VDS) parameter: tp = 80 s 4.5 A Typ. drain-source on-resistance RDS (on) = (ID) parameter: VGS 26 Ptot = 78W l kj i h g f VGS [V] 22 a 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 a b c d ID 3.5 e RDS (on) b c 20 18 16 14 12 10 8 6 k e f g h ij 3.0 2.5 2.0 1.5 c d e df g h i j k 10.0 l 20.0 1.0 b 4 2 V 80 0.5 a VGS [V] = a 4.0 4.5 b 5.0 c 5.5 d 6.0 e f 6.5 7.0 g 7.5 h i j k 8.0 9.0 10.0 20.0 0.0 0 10 20 30 40 50 60 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 A 3.6 VDS ID Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 s VDS2 x ID x RDS(on)max 3.0 parameter: tp = 80 s, VDS2 x ID x RDS(on)max 2.0 A ID 2.0 gfs S 1.5 1.0 1.0 0.5 0.5 0.0 0 1 2 3 4 5 6 7 8 V 10 0.0 0.0 0.5 1.0 1.5 2.0 VGS A ID 3.0 Semiconductor Group 6 07/96 BUZ 50 B Drain-source on-resistance RDS (on) = (Tj ) parameter: ID = 1.5 A, VGS = 10 V 38 Gate threshold voltage VGS (th) = (Tj) parameter: VGS = VDS, ID = 1 mA 4.6 V 4.0 32 98% RDS (on) 28 VGS(th) 3.6 3.2 typ 24 20 16 2.8 2.4 2.0 2% 98% 12 8 4 0 -60 1.6 1.2 0.8 0.4 0.0 -60 -20 20 60 100 C 160 typ -20 20 60 100 C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 Forward characteristics of reverse diode IF = (VSD) parameter: Tj , tp = 80 s 10 1 nF C 10 0 A Ciss IF 10 0 10 -1 10 -1 Coss Crss Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 -2 0 5 10 15 20 25 30 V VDS 40 10 -2 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Semiconductor Group 7 07/96 BUZ 50 B Drain-source breakdown voltage V(BR)DSS = (Tj ) Typ. gate charge VGS = (QGate) parameter: ID puls = 4 A 16 1200 V 1160 V V(BR)DSS 1140 1120 1100 1080 1060 1040 1020 1000 980 960 940 920 900 -60 VGS 12 10 0,2 VDS max 0,8 VDS max 8 6 4 2 0 -20 20 60 100 C 160 0 10 20 30 40 50 nC 65 Tj Q Gate Semiconductor Group 8 07/96 BUZ 50 B Package Outlines TO-220 AB Dimension in mm Semiconductor Group 9 07/96 |
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